氧还原反应(ORR)是燃料电池阴极重要的电化学反应过程, 其自发反应进程缓慢, 对氧还原反应起高效催化作用的催化剂面临价格昂贵、合成流程复杂、污染环境等问题, 因此探索合成简单、环境友好的氧还原催化剂制备方法具有重要意义。铁氮共掺杂介孔碳材料(Fe-N/MC)是一种有巨大应用价值的非贵金属氧还原反应催化剂。本工作通过在马弗炉中的半封闭体系内高温碳化小分子前驱体得到介孔碳材料(MC_M), 再把获得的MC_M与铁盐混合在管式炉中高温处理制备得到铁氮共掺杂介孔碳材料(Fe-N/MC_MT)。该方法热解条件简单, 无需模板剂和NH₃、HF等有毒物质。由于MC_M含有较高的氮和氧元素, 有利于提升介孔碳材料表面的亲水性和配位能力, 通过MC_M和铁盐制备出的Fe-N/MC_MT含有丰富的、催化ORR的Fe-N_x活性位点, 其起始电位和半波电位分别为0.941和0.831 V (vs RHE), 比商业化Pt/C催化剂的起始电位和半波电位分别正34和16 mV。氧还原反应按照反应过程分为二电子过程和四电子过程, Fe-N/MC_MT和Pt/C的转移电子数分别为3.77和3.91, 表明具有四电子反应过程。

High-performance infrared (IR) photodetectors made by low dimensional materials promise a wide range of applications in communication, security and biomedicine. Moreover, light-harvesting effects based on novel plasmonic materials and their combinations with two-dimensional (2D) materials have raised tremendous interest in recent years, as they may potentially help the device complement or surpass currently commercialized IR photodetectors. Graphene is a particularly attractive plasmonic material because graphene plasmons are electrically tunable with a high degree of electromagnetic confinement in the mid-infrared (mid-IR) to terahertz regime and the field concentration can be further enhanced by forming nanostructures. Here, we report an efficient mid-IR room-temperature photodetector enhanced by plasmonic effect in graphene nanoresonators (GNRs)/graphene heterostructure. The plasmon polaritons in GNRs are size-dependent with strong field localization. Considering that the size and density of GNRs are controllable by chemical vapor deposition method, our work opens a cost-effective and scalable pathway to fabricate efficient IR optoelectronic devices with wavelength tunability.

Black phosphorus (BP) is a promising material for ultrafast and broadband photodetection because of its narrow bandgap from 0.35 eV (bulk) to 1.8 eV (monolayer) and high carrier mobility. Although photodetectors based on BP with different configurations have been reported, high photosensitivity was mostly observed in the visible range. A highly efficient BP-based infrared photodetector operated in the telecom spectral range, especially at 1550 nm, has not been demonstrated. Here, we report a Schottky-type photodetector based on thin BP flakes, operating in a broad spectral range from visible (635 nm) to infrared (1550 nm). A responsivity as high as 230 A·W 1 was achieved at 1550 nm with a source-drain bias of 1 V. The rise time is 4.8 ms, and the fall time is 6.8 ms. Under light illumination and external bias, the Schottky barrier between the BP and metal was reduced, leading to efficient photocurrent extraction. The unprecedented performance of the BP photodetector indicates intriguing potential for sensing, imaging, and optical communication.